s29gl512n.pdf
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s29gl512n.pdf
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PublicationNumberS29GL-N_00RevisionBAmendment8IssueDateMay30,2008S29GL-NS29GL-NCoverSheetMirrorBitFlashFamilyS29GL512N,S29GL256N,S29GL128N512Megabit,256Megabit,and128Megabit,3.0Volt-onlyPageModeFlashMemoryfeaturing110nmMirrorBitProcessTechnologyDataSheetThisproductfamilyhasbeenretiredandisnotrecommendedfordesigns.Fornewandcurrentdesigns,S29GL128P,S29GL256P,andS29GL512PsupersedeS29GL128N,S29GL256N,andS29GL512Nrespectively.Thesearethefactory-recommendedmigrationpaths.PleaserefertotheS29GL-PFamilydatasheetforspecificationsandorderinginformation.Availabilityofthisdocumentisretainedforreferenceandhistoricalpurposesonly.NoticetoReaders:
ThisdocumentstatesthecurrenttechnicalspecificationsregardingtheSpansionproduct(s)describedherein.SpansionInc.deemstheproductstohavebeeninsufficientproductionvolumesuchthatsubsequentversionsofthisdocumentarenotexpectedtochange.However,typographicalorspecificationcorrections,ormodificationstothevalidcombinationsofferedmayoccur.2S29GL-NS29GL-N_00_B8May30,2008DataSheetNoticeOnDataSheetDesignationsSpansionInc.issuesdatasheetswithAdvanceInformationorPreliminarydesignationstoadvisereadersofproductinformationorintendedspecificationsthroughouttheproductlifecycle,includingdevelopment,qualification,initialproduction,andfullproduction.Inallcases,however,readersareencouragedtoverifythattheyhavethelatestinformationbeforefinalizingtheirdesign.ThefollowingdescriptionsofSpansiondatasheetdesignationsarepresentedheretohighlighttheirpresenceanddefinitions.AdvanceInformationTheAdvanceInformationdesignationindicatesthatSpansionInc.isdevelopingoneormorespecificproducts,buthasnotcommittedanydesigntoproduction.Informationpresentedinadocumentwiththisdesignationislikelytochange,andinsomecases,developmentontheproductmaydiscontinue.SpansionInc.thereforeplacesthefollowingconditionsuponAdvanceInformationcontent:
“ThisdocumentcontainsinformationononeormoreproductsunderdevelopmentatSpansionInc.Theinformationisintendedtohelpyouevaluatethisproduct.Donotdesigninthisproductwithoutcontactingthefactory.SpansionInc.reservestherighttochangeordiscontinueworkonthisproposedproductwithoutnotice.”PreliminaryThePreliminarydesignationindicatesthattheproductdevelopmenthasprogressedsuchthatacommitmenttoproductionhastakenplace.Thisdesignationcoversseveralaspectsoftheproductlifecycle,includingproductqualification,initialproduction,andthesubsequentphasesinthemanufacturingprocessthatoccurbeforefullproductionisachieved.ChangestothetechnicalspecificationspresentedinaPreliminarydocumentshouldbeexpectedwhilekeepingtheseaspectsofproductionunderconsideration.SpansionplacesthefollowingconditionsuponPreliminarycontent:
“ThisdocumentstatesthecurrenttechnicalspecificationsregardingtheSpansionproduct(s)describedherein.ThePreliminarystatusofthisdocumentindicatesthatproductqualificationhasbeencompleted,andthatinitialproductionhasbegun.Duetothephasesofthemanufacturingprocessthatrequiremaintainingefficiencyandquality,thisdocumentmayberevisedbysubsequentversionsormodificationsduetochangesintechnicalspecifications.”CombinationSomedatasheetscontainacombinationofproductswithdifferentdesignations(AdvanceInformation,Preliminary,orFullProduction).Thistypeofdocumentdistinguishestheseproductsandtheirdesignationswherevernecessary,typicallyonthefirstpage,theorderinginformationpage,andpageswiththeDCCharacteristicstableandtheACEraseandProgramtable(inthetablenotes).Thedisclaimeronthefirstpagerefersthereadertothenoticeonthispage.FullProduction(NoDesignationonDocument)Whenaproducthasbeeninproductionforaperiodoftimesuchthatnochangesoronlynominalchangesareexpected,thePreliminarydesignationisremovedfromthedatasheet.Nominalchangesmayincludethoseaffectingthenumberoforderingpartnumbersavailable,suchastheadditionordeletionofaspeedoption,temperaturerange,packagetype,orVIOrange.Changesmayalsoincludethoseneededtoclarifyadescriptionortocorrectatypographicalerrororincorrectspecification.SpansionInc.appliesthefollowingconditionstodocumentsinthiscategory:
“ThisdocumentstatesthecurrenttechnicalspecificationsregardingtheSpansionproduct(s)describedherein.SpansionInc.deemstheproductstohavebeeninsufficientproductionvolumesuchthatsubsequentversionsofthisdocumentarenotexpectedtochange.However,typographicalorspecificationcorrections,ormodificationstothevalidcombinationsofferedmayoccur.”Questionsregardingthesedocumentdesignationsmaybedirectedtoyourlocalsalesoffice.PublicationNumberS29GL-N_00RevisionBAmendment8IssueDateMay30,2008Thisproductfamilyhasbeenretiredandisnotrecommendedfordesigns.Fornewandcurrentdesigns,S29GL128P,S29GL256P,andS29GL512PsupersedeS29GL128N,S29GL256N,andS29GL512Nrespectively.Thesearethefactory-recommendedmigrationpaths.PleaserefertotheS29GL-PFamilydatasheetforspecificationsandorderinginformation.DistinctiveCharacteristicsArchitecturalAdvantages?
SinglePowerSupplyOperation3voltread,erase,andprogramoperations?
EnhancedVersatileI/OControlAllinputlevels(address,control,andDQinputlevels)andoutputsaredeterminedbyvoltageonVIOinput.VIOrangeis1.65toVCC?
Manufacturedon110nmMirrorBitProcessTechnology?
SecuredSiliconSectorRegion128-word/256-bytesectorforpermanent,secureidentificationthroughan8-word/16-byterandomElectronicSerialNumber,accessiblethroughacommandsequenceMaybeprogrammedandlockedatthefactoryorbythecustomer?
FlexibleSectorArchitectureS29GL512N:
Fivehundredtwelve64Kword(128Kbyte)sectorsS29GL256N:
Twohundredfifty-six64Kword(128Kbyte)sectorsS29GL128N:
Onehundredtwenty-eight64Kword(128Kbyte)sectors?
CompatibilitywithJEDECStandardsProvidespinoutandsoftwarecompatibilityforsingle-powersupplyflash,andsuperiorinadvertentwriteprotection?
100,000EraseCyclespersectortypical?
20-yearDataRetentiontypicalPerformanceCharacteristics?
HighPerformance90nsaccesstime(S29GL128N,S29GL256N)100ns(S29GL512N)8-word/16-bytepagereadbuffer25nspagereadtimes16-word/32-bytewritebufferreducesoverallprogrammingtimeformultiple-wordupdates?
LowPowerConsumption(typicalvaluesat3.0V,5MHz)25mAtypicalactivereadcurrent;50mAtypicalerase/programcurrent1Atypicalstandbymodecurrent?
PackageOptions56-pinTSOP64-ballFortifiedBGASoftware&HardwareFeatures?
SoftwareFeaturesProgramSuspendandResume:
readothersectorsbeforeprogrammingoperationiscompletedEraseSuspendandResume:
read/programothersectorsbeforeaneraseoperationiscompletedData#pollingandtogglebitsprovidestatusUnlockBypassProgramcommandreducesoverallmultiple-wordprogrammingtimeCFI(CommonFlashInterface)compliant:
allowshostsystemtoidentifyandaccommodatemultipleflashdevices?
HardwareFeaturesAdvancedSectorProtectionWP#/ACCinputacceleratesprogrammingtime(whenhighvoltageisapplied)forgreaterthroughputduringsystemproduction.ProtectsfirstorlastsectorregardlessofsectorprotectionsettingsHardwareresetinput(RESET#)resetsdeviceReady/Busy#output(RY/BY#)detectsprogramorerasecyclecompletionS29GL-NMirrorBitFlashFamilyS29GL512N,S29GL256N,S29GL128N512Megabit,256Megabit,and128Megabit,3.0Volt-onlyPageModeFlashMemoryfeaturing110nmMirrorBitProcessTechnologyDataSheetProductAvailabilityTableDensityInit.AccessVCCAvailability512Mb110nsFullNow100nsFullNow256Mb110nsFullNow100nsFullNow90nsRegulatedNow128Mb110nsFullNow100nsFullNow90nsRegulatedNow4S29GL-NS29GL-N_00_B8May30,2008DataSheetGeneralDescriptionTheS29GL512/256/128Nfamilyofdevicesare3.0Vsinglepowerflashmemorymanufacturedusing110nmMirrorBittechnology.TheS29GL512Nisa512Mbit,organizedas33,554,432wordsor67,108,864bytes.TheS29GL256Nisa256Mbit,organizedas16,777,216wordsor33,554,432bytes.TheS29GL128Nisa128Mbit,organizedas8,388,608wordsor16,777,216bytes.Thedeviceshavea16-bitwidedatabusthatcanalsofunctionasan8-bitwidedatabusbyusingtheBYTE#input.ThedevicecanbeprogrammedeitherinthehostsystemorinstandardEPROMprogrammers.Accesstimesasfastas90ns(S29GL128N,S29GL256N),100ns(S29GL512N)areavailable.Notethateachaccesstimehasaspecificoperatingvoltagerange(VCC)andanI/Ovoltagerange(VIO),asspecifiedintheProductSelectorGuideonpage9andtheOrderingInformationonpage14.Thedevicesareofferedina56-pinTSOPor64-ballFortifiedBGApackage.Eachdevicehasseparatechipenable(CE#),writeenable(WE#)andoutputenable(OE#)controls.Eachdevicerequiresonlyasingle3.0voltpowersupplyforbothreadandwritefunctions.InadditiontoaVCCinput,ahigh-voltageacceleratedprogram(WP#/ACC)inputprovidesshorterprogrammingtimesthroughincreasedcurrent.Thisfeatureisintendedtofacilitatefactorythroughputduringsystemproduction,butmayalsobeusedinthefieldifdesired.ThedevicesareentirelycommandsetcompatiblewiththeJEDECsingle-power-supplyFlashstandard.Commandsarewrittentothedeviceusingstandardmicroprocessorwritetiming.Writecyclesalsointernallylatchaddressesanddataneededfortheprogramminganderaseoperations.Thesectorerasearchitectureallowsmemorysectorstobeerasedandreprogrammedwithoutaffectingthedatacontentsofothersectors.Thedeviceisfullyerasedwhenshippedfromthefactory.Deviceprogramminganderasureareinitiatedthroughcommandsequences.Onceaprogramoreraseope
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